GaN in Plastic Transistor Equips Radar and Communications System Designers with 10 W of CW power in Surface Mount Package
LOWELL, Mass. — (BUSINESS WIRE) — March 6, 2014 — M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance RF, microwave, and millimeter wave products, introduced today its newest addition to the GaN in Plastic series. The wideband packaged GaN power transistor is ideal for high-performance civilian and military radar and communications systems. The MAGX-000035-01000P is a 10 W GaN on SiC unmatched power transistor, which offers broad RF frequency capability, reliable high voltage operation, and smallest footprint in plastic-packaging technology. The surface mount technology enables faster time-to-market through the use of high volume commercial, surface mount assembly methods.
Packaged in miniature 3 x 6 mm DFN and 14-Lead DFN package, the MAGX-000035-01000P operates from DC-3.5 GHz and leverages thermal management techniques to ensure excellent reliability in true surface mount applications. The device also operates at 50 V drain bias resulting in outstanding power density performance, higher efficiency, and smaller impedance matching circuits due to improved device parasitics. The high voltage operation also benefits overall system design with smaller energy storage capacitors and lower current draw. The device can operate in pulsed and CW modes and maintains a calculated mean-time-to-failure (MTTF) at 200 deg C of roughly 600 years.
“MACOM’s 10 W GaN in Plastic power transistor offers both pulsed and CW modes of operation making it a highly versatile driver or final power stage for multiple applications,” said Paul Beasly, Product Manager. “Furthermore, the device has been thermally designed to operate with standard surface-mount assembly which significantly simplifies the design and implementation into higher level systems.”
The table below outlines typical performance:
PAE @ 1GHz