Toshiba Electronic Devices & Storage Corporation Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Type Package

— Second-generation devices provide improved surge peak forward current and figure of merit, now in a surface-mount type package —

TOKYO — (BUSINESS WIRE) — October 16, 2017Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments start today.

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20171016006343/en/

Toshiba Electronic Devices & Storage Corporation: Second-Generation 650V SiC Schottky Barrier Diodes ...

Toshiba Electronic Devices & Storage Corporation: Second-Generation 650V SiC Schottky Barrier Diodes in DPAK surface-mount type package. (Photo: Business Wire)

Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.

Features

  • High surge peak forward current: Approx. 7 to 9.5 times the current rating, IF(DC).
  • Low figure of merit (VF•Qc): About 1/3 lower than first generation products, indicating high efficiency.
  • Surface-mount package: Enables auto mounters and helps to reduce system size and thickness.

Applications

The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.

  • Consumer and OA products: power supply for large screen 4K LCD & OLED TV sets, projectors, multifunction copiers, etc.
  • Industrial equipment: power supply for telecommunication base stations, PC servers, solar microinverters, etc.
  • For circuits: power factor correction (PFC) circuits; micro inverter circuits; chopper circuits (various power supplies of hundreds of watts or more).
  • Free-wheel diode for switching device.
 

Main Specifications

Package       Absolute Maximum Ratings   Electrical Characteristics

Forward
DC current

 

Non-repetitive
Peak Forward
Surge Current

 

Total Power
Dissipation

 

Junction
temperature

Forward
Voltage

 

Figure
of merit

 

Junction
Capacitance

 

Total
Capacitive
Charge

Symbol I F(DC) I FSM P tot T j V F

V F •Qc

C j Q C
Unit (A) (A) (W) (℃) (V)

(V•nC)

(pF) (nC)
Value Max. Max. Max. Max. Typ. Typ. Typ.

Product/ Condition

@ Half-sine
Wave
t=10ms

Tc=25℃

@ I F(DC)

@ V R =

1V

@V R =

400V

Surface-mount type DPAK /

Equivalent to TO-252

TRS2P65F 2 19 34.0 175 1.45

(Typ.)


1.60

(Max.)

8.4 85 5.8
TRS3P65F 3 26 37.5 11.7 120 8.1
TRS4P65F 4 33 41.0 15.1 165 10.4
TRS6P65F 6 45 48.3 21.9 230 15.1
TRS8P65F 8 58 55.5 28.6 300 19.7
  TRS10P65F   10   70   62.5       35.4   400   24.4
 

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