Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency

- Expanding line-up of U-MOS X-H power MOSFET series -

TOKYO — (BUSINESS WIRE) — March 29, 2020Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200329005003/en/

Toshiba: 80V N-channel power MOSFETs “U-MOS X-H series” (Photo: Business Wire)

Toshiba: 80V N-channel power MOSFETs “U-MOS X-H series” (Photo: Business Wire)

The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.

Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.

Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.

Applications

  • Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
  • Motor control equipment (Motor drive, etc.)

Features

  • The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
  • Industry’s lowest level[3] On-resistance:
         RDS(ON)=2.43mΩ (max) @VGS=10V (TPH2R40QM)
         RDS(ON)=19mΩ (max) @VGS=10V (TPN19008QM)
  • High channel temperature rating : Tch=175℃

Main Specifications

(Unless otherwise specified, @Ta=25℃)

Part number

TPH2R408QM

TPN19008QM

Absolute

Maximum

ratings

Drain-source voltage VDSS (V)

80

80

Drain current (DC) ID (A)

@Tc=25℃

120

34

Channel temperature Tch (℃)

175

175

Electrical

characteristics

Drain-source On-resistance

RDS(ON) max (mΩ)

@VGS=10V

2.43

19

@VGS=6V

3.5

28

Total gate charge (gate-source plus gate-drain)

Qg typ. (nC)

87

16

Gate switch charge Qsw typ. (nC)

28

5.5

Output charge Qoss typ. (nC)

90

16.5

Input capacitance Ciss typ. (pF)

5870

1020

Packages

Name

SOP Advance

TSON Advance

Size typ. (mm)

5.0×6.0

3.3×3.3

Stock Check & Purchase

Buy Online

Buy Online

Notes:
[1] Total gate charge (gate-source plus gate-drain), gate switch charge, output charge
[2] Compared with TPH4R008NH (U-MOS VIII-H series), TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15%, drain-source On-resistance x gate switch charge by approximately 10%, and drain-source On-resistance x output charge by approximately 31%.
[3] As of March 30, 2020, Toshiba survey.

Follow the links below for more on the new products.

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